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Freescale Semiconductor Advance Information
Document Number: MMM6025 Rev. 5.1, 03/2005
MMM6025
MMM6025
Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch
Device MMM6025
Package Information Case 1603-2 9.85 x 9.0 x 1.4 mm HDI (Organic Multi-Chip Module) Ordering Information Operating Temp. Range Package
-20 to 70C HDI Module -20 to 70C HDI Module Tape and Reel
MMM6025R2
1
Introduction
Contents
1 2 3 4 5 6 7 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Functional Block Diagram . . . . . . . . . . . . . . . 2 Electrical Characteristics . . . . . . . . . . . . . . . 2 RF Specifications . . . . . . . . . . . . . . . . . . . . . . 4 Signal Descriptions . . . . . . . . . . . . . . . . . . . 11 Package Information . . . . . . . . . . . . . . . . . . 14 Product Documentation . . . . . . . . . . . . . . . . 16
The MMM6025 is a 50 Tx Power Amplifier Front-End Module for quad- and tri-band GSM/GPRS handset applications, functioning over the GSM850, EGSM, DCS, and PCS transmit and receive frequency bands. It is compatible with GSM/GPRS Class 12 operating modes. To simplify radio front-end design requirements, power amplification, power coupling, power detection, low pass filtering, and antenna switching functions are integrated into the Power Amplifier Front-End Module. Transmit/receive path and enable functions are controlled through 0/2.8 V logic inputs.
This document contains information on a new product. Specifications and information herein are subject to change without notice. (c) Freescale Semiconductor, Inc., 2004, 2005. All rights reserved.
Functional Block Diagram
2
Functional Block Diagram
Figure 1 is a functional block diagram of the quad-band (GSM850, EGSM, DCS, and PCS) power amplifier module.
VDD3_HB VDDB_HB, VDD1_HB VDD2_HB RX_CEL RX_GSM RX_PCS RX_DCS
MATCH
MATCH
MMM6025
GSM/GPRS PA MODULE 850/900/1800/1900
TXIN_HB
MATCH
PREDRIVER
DRIVER
FINAL
MATCH Coupler Harmon ic Filter
VAPC EN_TX VREG_2.8 BIAS CONTROL SP6T ANTENNA
TXIN_LB
MATCH
PREDRIVER
Coupler DRIVER FINAL MATCH Harmonic Filter
MATCH VDDB_LB, VDD1_LB
MATCH
POWER DETECTION VREF VDET EN_DET
ANTENNA CONTROL EUB_US EN_ANT_TX LOWB_HIGH
VDD2_LB VDD3_LB
EN_DET_PA
Figure 1. Functional Block Diagram
3
Electrical Characteristics
Table 1. Maximum Ratings
Rating Symbol Vdd Pin TA Tstg TJ Value 7.0 11 -20 to 70 -40 to 125 125 Unit V dBm C C C
Drain Supply Voltages RF Input Power Operating (Ambient) Temperature Range Storage Temperature Junction Temperature
Note: Maximum Ratings and ESD 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 150 V and Machine Model (MM) 50 V. Additional ESD data available upon request.
MMM6025 Advance Information, Rev. 5.1 2 Freescale Semiconductor
Electrical Characteristics
Table 2. Recommended Operating Conditions
Characteristic Drain Supply Voltage Power Control Ramp Voltage RF Input Power Symbol Vdd VRAMP Pin Min 2.8 0.1 5 Typ 3.2 Max 4.5 2.2 11 Unit V V dBm
Table 3. DC Specifications
Characteristic Voltage PA I (Drain Supplies) Transmitter Off Transmitter On PA Output Control Voltage PA Output Control Current Detector PA Enable High Low Voltage1 VEN_DET_PA(H) VEN_DET_PA(L) IEN_DET_PA(H) IEN_DET_PA(L) VEUB_US(H) VEUB_US(L) IEUB_US(H) IEUB_US(L) VEN_ANT_TX(H) VEN_ANT_TX(L) 2.5 0 2.5 0 2.5 0 2.65 2.5 0 2.9 0.3 2.0 10 2.9 0.3 0.1 10 2.9 0.3 0.1 10 2.9 18 2.9 0.3 mA A V mA V VLOWB_HIGH(H) VLOWB_HIGH(L) mA A Vdc mA A Vdc Symbol Min Typ Max Unit Vdc Vdd(TX_off) Vdd(TX_on) VAPC IAPC 2.8 0.1 -3.0 3.6 3.2 0.2 to 2.1 7.0 4.5 2.2 3.5 V mA Vdc
Detector PA Enable Current1 Source Sink Mode Select Voltage US (selects GSM850 or PCS) EU (selects EGSM or DCS) RX Band Select Current Source Sink TX Antenna Enable Voltage High Low TX Antenna Enable Current Source Sink Voltage PA 2 (Regulated Supply) Current Draw BAND SELECT High (DCS/PCS Bands Selected) Low (GSM850/EGSM Bands Selected)
IEN_ANT_TX(H) IEN_ANT_TX(L) VREG28 IREG28
MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 3
RF Specifications
Table 3. DC Specifications (continued)
Characteristic BAND SELECT Current Level High Low Total module leakage current (Standby condition) EN_DET_PA = 0.3 V EUB_US = EN_ANT_TX = +0.3 V LOWB_HIGH = 0.3 V VAPC = 0.1 V VREG_IN = 0 V or 2.775 V Temp = 23 to 27C Vdd = 3.8 V
1
Symbol
Min
Typ
Max
Unit A
ILOWB_HIGH(H) ILOWB_HIGH(L) IVdd(off)
-
5.0
10 10 7.0 A
The MMM6025 pinout is compatible with that of MMM6022, except pin 8. MMM6025 signal EN_DET_PA (pin 16) is equivalent to a combination of both MMM6022 signals EN_TX and EN_DET.
The following table provides additional details on MMM6025 orderable parts.
Table 4. Orderable Parts Details
Device Operating Temp. Range (TA) -20 to 70C -20 to 70C Package RoHS Compliant Yes Yes Pb-Free MSLLevel SolderTemp.
MMM6025 MMM6025R2
HDI Module HDI Module Tape and Reel
Yes Yes
3 3
250 C 250 C
4
RF Specifications
Table 5. EGSM Band Specifications
Characteristic Symbol Min Typ Max Unit
This section details specifications for the EGSM, DCS, GSM850, and PCS bands.
EGSM BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = Low, EUB_US = Low, TC = 25C 5C, unless otherwise noted.) Operating Frequency Transmit Receive Power Out Power Out Low Voltage (Vdd = 2.8 V) Power Added Efficiency (Saturated Pout) Power Control Range1 Power Control Slope2 f 880 925 Po(max) Po(min) PAE Po(range) Vdet/VAPC 33 32 40 35 44 915 960 3.0 dBm dBm % dB V/V MHz
MMM6025 Advance Information, Rev. 5.1 4 Freescale Semiconductor
RF Specifications
Table 5. EGSM Band Specifications (continued)
Characteristic Power Control Frequency 3.0 dB BW Power Control Response Time3 Forward Isolation
4
Symbol PC3dB tPC ISO1 ISO2 VDET(low) VDET(high) 2f0 - 15f0 nRX (925 to 935 MHz) nRX (935 to 960 MHz) Po_ot(min) IL_RX ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS VSWR CPLV Rugg Stab Pout_Temp Ambient 1 (Pout = 6 dBm) Pout_Temp Ambient 2 (Pout = 20 dBm) Pout_Temp Ambient 3 (Pout = 33 dBm)
Min 1.0 40 1.0 31.5 27 27 27 27 -1.5
Typ -
Max 1.5 -41 -22 150 2.05 -33 -73 -84 1.4 2:1 1.5
Unit MHz s dBm
Power Detector Voltage1 Low Power High Power Harmonics5 (Pout Max = 33 dBm) GSM RX Band Noise5 (Vdd = 4.2 V, Saturated Pout) (Pout = 33 dBm)
mV V dBm dBm/ 100 kHz dBm/ 100 kHz dBm dB dB
Pout over Temp (Vdd = 2.8 V, TA = -20 to 70C) Insertion Loss from Antenna to RX_GSM5 Tx - Rx Isolation5 ANTENNA to RX_CEL ANTENNA to RX_GSM ANTENNA to RX_DCS ANTENNA to RX_PCS Input VSWR Power Out Change due to Coupling Variations (VSWR = 3:1 @ ANT Port)6 Load Mismatch Stress (Ruggedness)7 Stability - Spurious Output8 Closed Loop Power Variation over Temperature9
dB
No performance degradation and no module damage -1.5 1.0 -0.5 -36 1.5 1.0 0.5 dBm dB dB dB
1 2 3 4 5 6 7
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70C Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. Measured at antenna port, ISO1: Pin = -10 dBm, EN_ANT_TX = 0 V, VAPC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70C Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: Pout = 33 dBm Output VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70C, Power less than or equal to 33dBm.
MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 5
RF Specifications
8
Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70C, Power less than or equal to 33dBm. 9 Vdiff_var = 20*LOG(Delta(T)/Delta(25C)), where T is -20 to 65C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25C)= [Vdiff(25C) with RF] - [Vdiff(25C) without RF]
Table 6. DCS Band Specifications
Characteristic Symbol Min Typ Max Unit
DCS BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = High, EUB_US = Low, TC = 25C 5C, unless otherwise noted.) Operating Frequency Transmit Receive Power Out Power Out Low Voltage (Vdd = 2.8 V) Power Added Efficiency (Saturated Pout) Power Control Range1 Power Control Slope2 f 1710 1805 Po(max) Po(min) PAE Po(range) Vdet/VAPC PC3dB tPC ISO1 ISO2 VDET(low) VDET(high) 2f0 - 15f0 nRX Po_ot(min) IL_RX ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS VSWR CPLV Rugg 30 29 28 35 1.0 40 1.0 28.5 27 27 27 27 -1.5 33 1785 1880 3.5 1.5 -53 -25 150 2.05 -33 -77 1.7 2:1 1.5 dB dBm dBm % dB V/V MHz s dBm MHz
Power Control Frequency 3.0 dB BW Power Control Response Forward Isolation4 Power Detector Voltage1 Low Power High Power Harmonics6 (Pout Max = 30 dBm) RX Band Noise5,6 (Pout = 30 dBm) Pout over Temp (Vdd = 2.8 V, TA = -20 to 70C) Insertion Loss from Antenna to RX_DCS6 Tx - Rx Isolation6 ANTENNA to RX_CEL ANTENNA to RX_GSM ANTENNA to RX_DCS ANTENNA to RX_PCS Input VSWR Power Out Change due to Coupling Variations (VSWR = 3:1 @ ANT Port)7 Load Mismatch Stress (Ruggedness)8 Time3
mV V dBm dBm/ 100 kHz dBm dB dB
No performance degradation and no module damage
MMM6025 Advance Information, Rev. 5.1 6 Freescale Semiconductor
RF Specifications
Table 6. DCS Band Specifications (continued)
Characteristic Stability - Spurious Output9 Closed Loop Power Variation over Temperature10 Symbol Stab Pout_Temp Ambient 1 (Pout = 3 dBm) Pout_Temp Ambient 2 (Pout = 15 dBm) Pout_Temp Ambient 3 (Pout = 30 dBm) Min -1.5 1.0 -0.5 Typ Max -36 1.5 1.0 0.5 Unit dBm dB dB dB
1 2
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70C 3 Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. 4 Measured at antenna port: ISO1: Pin = -10 dBm, EN_ANT_TX = 0 V, VAPC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70C) 5 DCS RX band = 1805 to 1880 MHz. Vdd = 4.2V, Saturated Pout. 6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70C 7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: P out = 30 dBm 8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70C, Power less than or equal to 30 dBm 9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70C, Power less than or equal to 30dBm. 10 Vdiff_var = 20*LOG(Delta(T)/Delta(25C)), where T is -20 to 65C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25C)= [Vdiff(25C) with RF] - [Vdiff(25C) without RF]
Table 7. GSM850 Band Specifications
Characteristic Symbol Min Typ Max Unit
GSM850 BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = Low, EUB_US = High, TC = 25C 5C, unless otherwise noted.) Operating Frequency Transmit Receive Power Out Power Out Low Voltage (VCC_PA = 2.8 V) Power Added Efficiency (Saturated Pout) Power Control Range1 Power Control Slope
2
f 824 869 Po(max) Po(min) PAE Po(range) Vdet/VAPC PC3dB tPC ISO1 ISO2 33 32 38 35 1.0 43 849 894 3.0 1.5 -41 -22
MHz
dBm dBm % dB V/V MHz s dBm
Power Control Frequency 3.0 dB BW Power Control Response Time Forward Isolation4
3
MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 7
RF Specifications
Table 7. GSM850 Band Specifications (continued)
Characteristic Power Detector Voltage1 Low Power High Power Harmonics6 (Pout Max = 33 dBm) GSM850 RX Band Noise5,6 (Pout = 33 dBm) Pout over Temp (Vdd = 2.8 V, TA = -20 to 70C) Insertion Loss from Antenna to RX_GSM8506 Tx - Rx Isolation6 ANTENNA to RX_CEL ANTENNA to RX_GSM ANTENNA to RX_DCS ANTENNA to RX_PCS Input VSWR Power Out Change due to Coupling Variations (VSWR =3:1 @ ANT Port)7 Load Mismatch Stress (Ruggedness)8 Stability - Spurious Output9 Closed Loop Power Variation over Temperature10 Symbol Min Typ Max Unit
VDET(low) VDET(high) 2f0 - 15f0 nRX Po_ot(min) IL_RX ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS VSWR CPLV Rugg Stab Pout_Temp Ambient 1 Pout = 6 dBm Pout_Temp Ambient 2 Pout = 20 dBm Pout_Temp Ambient 3 Pout = 33 dBm
40 1.0 31.5 27 27 27 27 -1.5
-
150 2.05 -33 -84 1.4 2:1 1.5
mV V dBm dBm/ 100 kHz dBm dB dB
dB
No performance degradation and no module damage -1.5 dB 1.0 dB -0.5 dB -36 1.5dB 1.0 dB 0.5 dB dBm dB dB dB
1 2
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70C 3 Measurement made from 50% of V APC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. 4 Measured at antenna port: ISO1: P = -10 dBm, EN_ANT_TX = 0 V, V in APC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70C) 5 GSM850 RX band = 869 to 894 MHz. Vdd = 4.2 V, Saturated P . out 6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70C 7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: Pout = 33 dBm 8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70C, Power less than or equal to 33dBm 9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70C, Power less than or equal to 33dBm. 10 Vdiff_var = 20*LOG(Delta(T)/Delta(25C)), where T is -20 to 65C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25C)= [Vdiff(25C) with RF] - [Vdiff(25C) without RF]
MMM6025 Advance Information, Rev. 5.1 8 Freescale Semiconductor
RF Specifications
Table 8. PCS Band Specifications
Characteristic Symbol Min Typ Max Unit
PCS BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = High, EUB_US = High, TC = 25C 5C, unless otherwise noted.) Operating Frequency Transmit Receive Power Out Power Out Low Voltage (Vdd = 2.8 V) Power Added Efficiency (Saturated Pout) Power Control Range1 Power Control Slope2 f 1850 1930 Po(max) Po(min) PAE Po(range) Vdet/VAPC PC3dB tPC ISO1 ISO2 VDET(low) VDET(high) 2f0 - 15f0 nRX Po_ot(min) IL_RX ISO_ANT_RX_CEL ISO_ANT_RX_GSM ISO_ANT_RX_DCS ISO_ANT_RX_PCS VSWR CPLV Rugg 30 29 28 35 1.0 40 1.0 28.5 27 27 27 27 -1.5 33 1910 1990 3.5 1.5 -53 -25 150 2.05 -33 -77 1.7 2:1 1.5 dB dBm dBm % dB V/V MHz s dBm MHz
Power Control Frequency 3.0 dB BW Power Control Response Forward Isolation4 Power Detector Voltage1 Low Power High Power Harmonics6 (Pout Max = 30 dBm) RX Band Noise5,6 (Pout = 30 dBm) Pout over Temp (Vdd = 2.8 V, TA = -20 to 70C) Insertion Loss from Antenna to RX_PCS6 Tx - Rx Isolation6 ANT to RX_CEL ANT to RX_GSM ANT to RX_DCS ANT to RX_PCS Input VSWR Power Out Change due to Coupling Variations (VSWR = 3:1 @ ANT Port)7 Load Mismatch Stress (Ruggedness)8 Time3
mV V dBm dBm/100 kHz dBm dB dB
No performance degradation or module damage
MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 9
RF Specifications
Table 8. PCS Band Specifications (continued)
Characteristic Stability - Spurious Output9 Closed Loop Power Variation over Temperature10 Symbol Stab Pout_Temp Ambient 1 Pout = 3 dBm Pout_Temp Ambient 2 Pout = 15 dBm Pout_Temp Ambient 3 Pout = 30 dBm Min -1.5 dB 1.0 dB -0.5 dB
1 2
Typ -
Max -36 1.5dB 1.0 dB 0.5 dB
Unit dBm dB dB dB
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70 C) Vdd = 2.8V to 4.5V and Temperature = -20 to +70 C 3 Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range of 0.1 to 2.2 V and both rise and fall edges. 4 Measured at antenna port, ISO1: P = -10 dBm, EN_ANT_TX = 0 V, V in APC = 0.1 V; ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70 C) 5 PCS RX band = 1930 to 1990 MHz. Vdd = 4.2 V, Saturated P . out 6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70 C 7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: P out = 30 dBm 8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70C, Power less than or equal to 30 dBm 9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70C, Power less than or equal to 30dBm. 10 Vdiff_var = 20*LOG(Delta(T)/Delta(25C)), where T is -20 to 65C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and Delta(25C)= [Vdiff(25C) with RF] - [Vdiff(25C) without RF]
MMM6025 Advance Information, Rev. 5.1 10 Freescale Semiconductor
Signal Descriptions
5
Signal Descriptions
VDDB_HB + VDD1_HB VDD2_HB VDD3_HB RX_DCS
27
RX_PCS
Gnd
Gnd
Gnd
1
34
33
32
31
30
29
Gnd
28
26
Gnd
VAPC
2
25
RX_CEL
Gnd
3
24
Gnd
TXIN_HB
4
23
RX_GSM
MMM6025
Gnd
5
(Top View Through Package) 9.85 mm x 9.0 mm ( 0.1 mm)
22
Gnd
TXIN_LB
6
21
ANT
Gnd
7
20
Gnd
NC
8
19
EUB_US
Gnd
9
10
11
12
13
14
15
16
17
18
EN_ANT_TX
VDDB_LB + VDD1_LB
VDD2_LB
VDD3_LB
VREG28
VDET
VREF
Figure 2. Pin Out Table 9. Contact Connections
Section RF Signal TXIN_LB TXIN_HB ANT RX_GSM RX_DCS RX_CEL RX_PCS Description TX Input (Low Bands), DC Blocked TX Input (High Bands), DC Blocked Antenna RX Output (GSM Band) RX Output (DCS Band) RX Output (CEL Band) RX Output (PCS Band) Pin(s) 6 4 21 23 27 25 29
MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 11
LOWB_HIGH
EN_DET_PA
Signal Descriptions
Table 9. Contact Connections (continued)
Section Supply Signal VDDB_LB VDD1_LB VDD2_LB VDD3_LB VDDB_HB VDD1_HB VDD2_HB VDD3_HB VREG28 Control VAPC LOWB_HIGH EN_ANT_TX EUB_US EN_DET_PA Power VDET Detection VREF Ground
1
Description DC Supply (Battery) for Bias Control (Low Bands) DC Supply (Battery) for Pre-Driver (Low Bands) DC Supply (Battery) for Driver Stage (Low Bands) DC Supply (Battery) for Final Stage (Low Bands) DC Supply (Battery) for Bias Control (High Bands) DC Supply (Battery) for Pre-Driver (High Bands) DC Supply (Battery) for Driver Stage (High Bands) DC Supply (Battery) for Final Stage (High Bands) DC Reference Supply (Regulated) Analog Power Control Band Select Low (CEL, GSM)/High (DCS,PCS) Enable TX Antenna Switch Path Mode Select EU (GSM, DCS)/US (CEL, PCS) Enable Detector and Power Amplifier1 Detected Output of Detector Reference Output of Detector Ground
Pin(s) 10
11 12 34
33 32 13 2 17 18 19 16 15 14 3, 5, 7, 20, 22, 24, 26, 28, 31, 1, 9, 30
Gnd
The MMM6025 pinout is compatible with that of MMM6022, except pin 8. MMM6025 signal EN_DET_PA (pin 16) is equivalent to a combination of both MMM6022 signals EN_TX and EN_DET.
Table 10. Logic States
EUB_US High Low Low High High Low Low High LOWB_HIGH EN_AN_TX Low Low High High Low Low High High High High High High Low Low Low Low Mode TX TX TX TX RX RX RX RX Band(s) GSM850 EGSM DCS PCS GSM850 EGSM DCS PCS
MMM6025 Advance Information, Rev. 5.1 12 Freescale Semiconductor
Signal Descriptions
Figure 3 shows the top view of the MMM6025 demoboard application schematic.
VDD3_HB VDD2_HB VDD1_HB C6 C8 C7 C9 C10 C18 RX_PCS C19
RX_DCS 34 1 33 32 31 30 29 28 27 26 C17 2 VAPC C11 3 24 C16 4 TXIN_HB 5 23 RX_CEL 25
MMM6025 Top View
RX_GSM 22
6 TXIN_LB 7
21 ANT 20
N.C.
8
19 EUB_US
9 10 11 12 13 14 15 16 17
18 EN_ANT_TX
C1 = C2 = C6 = C7 = 0.1F C3 = C5 = C8 = C10 = 10F
LOWB_HIGH VDD1_LB VDD2_LB VDD3_LB VREG28 C1 C3 C2 C5 C4 C12 C13 C14 EN_DET_PA VDET VREF
C4 = C9 = 1F C11 = 2.2nF C12 = 0.01F C13 = 100pF C14 = C16 = C17 = C18 = C19 = 33pF
Figure 3. Demoboard Application Schematic
MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 13
Package Information
6
Package Information
Figure 4 shows the MMM6025 9.85 x 9.0 x 1.4 mm HDI package case outline. Figure 5 on page 15 shows the bottom view.
Figure 4. Package Outline
MMM6025 Advance Information, Rev. 5.1 14 Freescale Semiconductor
Package Information
Figure 5. Package Outline--Bottom View
MMM6025 Advance Information, Rev. 5.1 Freescale Semiconductor 15
7
Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com on the documentation page. Table 11 summarizes revisions to this document since the previous release (Rev. 5).
Table 11. Revision History
Location Mulitple locations Revision Changed Case Temp to Ambient Temp. Added Tape and Reel and Lead Free information.
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Document Number: MMM6025 Rev. 5.1 03/2005

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